| 摘要 |
PROBLEM TO BE SOLVED: To effectively remove only a resist residue produced after ashing without deteriorating the other portion of a semiconductor element. SOLUTION: The semiconductor device manufacturing method includes a process which prepares a substrate having a resist pattern, an etching process which performs a dry etching of the substrate using a resist pattern as a mask, an ashing process which performs an ashing treatment so that the resist pattern remains as a resist residue, a water treatment process which immerse the substrate where a resist residue remains after ashing into a pure water, and a process which removes the resist residue by DHF (diluted HF) after the water treatment process. COPYRIGHT: (C)2008,JPO&INPIT
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