| 摘要 |
<p>A nitride semiconductor laser element has a first nitride semiconductor layer (11), an active layer (12), a second nitride semiconductor layer (13), and a first protective film (25) in contact with a cavity end face of the nitride semiconductor layer, wherein the first protective film (25) in contact with at least the active layer (13) of the cavity end face has a region thinner than the maximum thickness of the first protective film (25).
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