| 摘要 |
A method and a device for regulating the threshold voltage of a transistor is disclosed. The device includes a circuit configured for modifying a voltage applied at a bulk connection of the transistor such that the threshold voltage of the transistor is substantially temperature-independent at least in a first temperature range. In one embodiment, the device includes a memory device, and the transistor is a transistor of a sense amplifier of the memory device.
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