发明名称 |
Nitride semiconductor device |
摘要 |
A nitride semiconductor device includes an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer which are periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer. An energy at a lower edge of a conduction band in the first nitride semiconductor layer is lower than an energy at a lower edge of a conduction band in the second nitride semiconductor layer, and an energy at an upper edge of a valence band in the first nitride semiconductor layer is lower than an energy at an upper edge of a valence band in the second nitride semiconductor layer.
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申请公布号 |
US7425732(B2) |
申请公布日期 |
2008.09.16 |
申请号 |
US20060410920 |
申请日期 |
2006.04.26 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
UEDA TETSUZO;NAKAZAWA SATOSHI;UEDA DAISUKE;TAKIZAWA TOSHIYUKI |
分类号 |
H01L33/06;H01L33/32 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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