Method for forming microelectronic assembly

摘要

A microelectronic assembly and a method for forming the same are provided. The method includes forming first and second lateral etch stop walls in a semiconductor substrate having first and second opposing surfaces. An inductor is formed on the first surface of the semiconductor substrate and a hole is formed through the second surface of the substrate to expose the substrate between the first and second lateral etch stop walls. The substrate is isotropically etched between the first and second lateral etch stop walls through the etch hole to create a cavity within the semiconductor substrate. A sealing layer is formed over the etch hole to seal the cavity.