| 摘要 |
A semiconductor device, for example a diode ( 200 ), having a pn junction ( 101 ) has an insulating material field shaping region ( 201 ) adjacent, and possibly bridging, the pn junction. The field shaping region ( 201 ) preferably has a high dielectric constant and is coupled via capacitive voltage coupling regions ( 204,205 ) to substantially the same voltages as are applied to the pn junction. When a reverse voltage is applied across the pn junction ( 101 ) and the device is non-conducting, a capacitive electric field, is present in a part of the field shaping region which extends beyond a limit of the pn junction depletion region which would exist in the absence of the field shaping region ( 201 ), the electric field in the field shaping region inducing a stretched electric field limited to a correspondingly stretched pn junction depletion region ( 208,209 ) and an increased reverse breakdown voltage of the device.
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