| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that heavy metal mixing in an alumite membrane scatters when an earth electrode forming the alumite membrane of a plasma treatment apparatus is exposed to plasma and adheres to a wafer performing plasma treatment and the adhered heavy metal deteriorates the characteristic of a semiconductor device. SOLUTION: At least a part of the earth electrode 114 easy to produce metal scattering by sputtering impact is covered by a high pure alumina membrane 115 by using a plasma spraying method. A metal contamination level on the wafer to be plasma-treated can be reduced to 109 pieces/cm2 or less, and the performance and reliability of an Si device can be improved. |
