发明名称 OPTICAL SEMICONDUCTOR INTEGRATED ELEMENT AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To obtain saturated light output high enough to be applicable to an optical communication system without an increase in manufacturing cost. SOLUTION: The optical semiconductor integrated element includes: a wavelength variable laser 1 comprising a gain waveguide portion 1A which generates gain, and a wavelength controlled waveguide portion 1B which controls an oscillation wavelength; and a semiconductor optical amplifier 2. In the optical semiconductor integrated element, the wavelength variable laser and the semiconductor optical amplifier are integrated on one and the same substrate. The semiconductor optical amplifier and the gain waveguide portion of the wavelength variable laser have the same multilayer structure, and an active layer 15B which constitutes the semiconductor optical amplifier is smaller in thickness than that of an active layer 15A which constitutes the gain waveguide portion of the wavelength variable laser. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008205113(A) 申请公布日期 2008.09.04
申请号 JP20070038208 申请日期 2007.02.19
申请人 FUJITSU LTD 发明人 TOMABECHI SHUICHI;TAKABAYASHI KAZUMASA
分类号 H01S5/026;G02B6/122;G02B6/13 主分类号 H01S5/026
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