| 摘要 |
<p>A semiconductor wafer exposure method and a photolithography system using the same are provided to increase a process margin and a yield and to reduce consumption of semiconductor wafers by correcting an exposure order. A semiconductor wafer coated with photoresist is exposed by determining an initial exposure order of a semiconductor wafer on the basis of set information(S201,S203). A line width uniformity measurement process is performed after the exposure process and a developing process(S205). The initial exposure order is corrected on the basis of the measured line width uniformity and the semiconductor wafer is exposed on the basis of the corrected exposure order(S207,S209). The exposure process is sequentially performed from a large line width part to a small line width part.</p> |
