| 摘要 |
A nitride semiconductor light emitting diode and a manufacturing method thereof are provided to improve the inside luminous efficiency and reduce the contact resistance. A substrate(111) comprises the sapphire, GaN, SiC, ZnC, GaAs or Si. A buffer layer(113) is formed on substrate. The silicon(Si) is doped on a n-type contact layer(117). The n-type contact layer is formed on the undoped GaN layer(115). The under-clad layer(119) is formed on the n-type contact layer. An InGaN quantum dot layer(121) is formed on the under-clad layer. And the GaN cap layer(123) for the quantum dot is formed on the InGaN quantum dot layer. An active layer(125) is formed on the GaN cap layer.
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