| 摘要 |
A semiconductor light emitting device has an active layer of a gallium nitride compound semiconductor material, a first semiconductor layer of Inx1Aly1Ga1-x1-y1N (0<=x1<=1, 0<=y1<=1), on a p-layer side of the active layer, and which is subjected to tensile strain, a second semiconductor layer of Inx2Aly2Ga1-x2-y2N, wherein (0<=x2<=1, 0<=y2<=1), and which has a bandgap energy smaller than the bandgap energy of the first semiconductor layer, and a third semiconductor layer between the first semiconductor layer and the second semiconductor layer, of Inx3Aly3Ga1-x3-y3N, wherein (0<=x3<=1, 0<=y3<=1), and which has a bandgap energy smaller than the bandgap energy of the first semiconductor layer and larger than the bandgap energy of the second semiconductor layer.
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