| 摘要 |
A broadband pre-impedance matching HFET(Heterostructure Field Effect Transistor) is provided to increase impedance of a gate and a drain and amplify frequency band by installing a feedback circuit directly at the gate and the drain. A broadband pre-impedance matching HFET(Heterostructure Field Effect Transistor) comprises a heatsink(10), a ceramic substrate(20), input and output leads(30,40), a GaN HFET chip(50), an impedance matching resistor(R1,R2,R3,R4), and a feedback circuit. The ceramic substrate has a square hole at the center and a tungsten pattern formed thereon. The heatsink is bonded to the ceramic substrate. The input and output leads are bonded to the ceramic substrate. The GaN HEFT chip is welded to the heatsink, and has a gate and a drain which are connected with input and output micro strip terminals of the ceramic substrate through wire bonding. The impedance matching resistor is alternately connected between a gate terminal and the input and output micro strip terminals of the ceramic substrate. The feedback circuit is mounted between the input and output leads. A cover is configured to protect the GaN HEFT chip and internal devices from external environment and prevent wires from being damaged.
|
