发明名称 |
Organic thin film transistor enhanced in charge carrier mobility by virtue of surface relief structure |
摘要 |
Disclosed herein is an organic thin film transistor comprising a substrate, a gate electrode, an organic insulating layer, an organic active layer and source/drain electrodes, wherein the interface between the organic insulating layer and the organic active layer is of relief structure. According to the present invention, an organic thin film transistor of enhanced electric properties can be obtained regardless of the organic insulating materials used.
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申请公布号 |
US7417246(B2) |
申请公布日期 |
2008.08.26 |
申请号 |
US20040845297 |
申请日期 |
2004.05.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN JUNG HAN;SEO EUN MI;HAN KOOK MIN;BARMATOV EVGENY;SHIBAEV VALERY |
分类号 |
H01L21/312;H01L29/08;H01L21/314;H01L21/336;H01L27/01;H01L29/04;H01L29/22;H01L29/786;H01L31/0392;H01L51/00;H01L51/05;H01L51/30;H01L51/40 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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