| 摘要 |
A method for manufacturing a semiconductor device is provided to obtain a gate insulation layer in which most nitrogen is disposed by the combination of introduction of active nitrogen and heat process. A method for manufacturing a semiconductor device includes: cleaning an Si substrate as a preliminary process(S1); forming a silicon oxide layer by thermally oxidizing a surface of the Si substrate by a rapid thermal oxidation(RTO)(S2); plasma-nitriding the silicon oxide layer under atmosphere containing nitrogen and helium(S3); annealing under ammonia atmosphere at a temperature of the Si substrate having 800 degrees centigrade and at a pressure in a chamber of 666.6 Pa(S4); and annealing under atmosphere containing nitrogen and oxygen as a post annealing(S5).
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