SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a semiconductor device and a manufacturing method thereof. The manufacturing method comprises the steps of: forming a transistor including a gate structure, a source or a drain on a semiconductor substrate; forming an oxide film on the transistor; forming mask film patterns on the oxide film where the mask film patterns include a first pattern with a first width and a second pattern with a second width which is different from the first width; forming a first trench and a second trench by removing parts of the oxide film by using the mask film patterns; filling the first trench and second trench with a nitride film; forming a third trench and a fourth trench by removing the rest of the oxide film; and forming a conductive contact by filling the third trench and fourth trench. Additionally, the width of the top of the third trench is as wide as the first width while the width of the top of the fourth trench is as wide as the second width. The purpose of the present invention is to provide the semiconductor device and manufacturing method thereof of which the reliability is improved.