| 摘要 |
PROBLEM TO BE SOLVED: To provide an amplification type solid state imaging apparatus which can provide an image of high picture quality having reduced noise while reducing a pixel size by reducing the number of transistors per pixel. SOLUTION: The amplification type solid state imaging apparatus includes: a plurality of photoelectric conversion parts 10 each of which includes an embedded photodiode 1 and a transfer transistor 2; a switched capacitor amplification part 20 with the input side connected to a charge detection node 8 to which output terminals of the plurality of photoelectric conversion parts 10 are connected in common; and a current amplification part 21 connected between the switched capacitor amplification part 20 and a vertical signal line 9. Signal charge from the plurality of photoelectric conversion parts 10 is converted into voltage by the switched capacitor amplification part 20, the converted signal is current-amplified by the current amplification part 21 and the current-amplified signal is output to the vertical signal line 9. COPYRIGHT: (C)2008,JPO&INPIT
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