| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of raising a temperature characteristic by suppressing electron overflow in a p-type clad layer, and also performing optical confinement to an active layer. SOLUTION: The semiconductor light-emitting element includes, on a substrate 10 composed of n-type GaAs; an n-type clad layer 12 composed of Al<SB>x</SB>Ga<SB>1-x</SB>P; an active layer 13 composed of GaInP; and the p-type clad layer 15 composed of Al<SB>x</SB>Ga<SB>1-x</SB>P. An electronic barrier layer 14 composed of GaP is arranged between the active layer 13 and the p-type clad layer 15. Thus, a refractive index difference between the clad layer and the active layer is secured and, at the same time, band discontinuity in a conduction band is enlarged. COPYRIGHT: (C)2008,JPO&INPIT
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