发明名称 DISPLAY DEVICE
摘要 A display device is provided to suppress deterioration of a light emitting element layer due to concentration of an electric field on an edge of the anode and to prevent increase of leakage current of a TFT(Thin Film Transistor) due to light emitted from the light emitting element layer. A display device forms a light emitting region by stacking a first electrode(61), a light emitting element layer(66), and a second electrode(67). A planarization insulating film(17) is formed at an end portion of the first electrode to separate the first electrode from the light emitting element layer and the second electrode. The planarization insulating film is overlapped with the first electrode at the entire peripheral portion of the first electrode and has an opening(68) formed in a region except the end portion of the first electrode where the planarization insulating film is inclined. The light emitting element layer is formed on the first electrode exposed by the opening along the end portion where the planarization insulating film is inclined. The second electrode covers the planarization insulating film and the light emitting element layer. The light emitting element layer is defined by the opening.
申请公布号 KR20080077067(A) 申请公布日期 2008.08.21
申请号 KR20080067477 申请日期 2008.07.11
申请人 SANYO ELECTRIC CO., LTD. 发明人 YAMADA TSUTOMU
分类号 H05B33/00;H01L27/32 主分类号 H05B33/00
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