| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a metal polishing composition capable of suppressing dishing and faulty wirings as well as the residue of particles on the surface of a device, and to provide a chemical mechanical polishing method using the same. <P>SOLUTION: The metal polishing composition is used for chemical mechanical polishing of a semiconductor device and contains (a) a compound expressed by a general formula A, (b) a compound expressed by a general formula B, (c) an abrasive grain, and (d) an oxidizing agent. In the general formula A, R<SP>1</SP>indicates an alkyl group of carbon number 1 to 3, and R<SP>2</SP>indicates a hydrogen atom or an alkyl group of carbon number 1 to 4. In the general formula B, R<SP>3</SP>, R<SP>4</SP>, and R<SP>5</SP>each indicate a hydrogen atom, an alkyl group, an amino group, a hydroxy group, and the like, independently. <P>COPYRIGHT: (C)2008,JPO&INPIT |
