| 摘要 |
PROBLEM TO BE SOLVED: To reduce an element resistance of a surface-emitting laser element of ion implantation type, and to suppress the threshold current of laser oscillation. SOLUTION: A surface-emitting laser has an active layer 13 disposed between an upper DBR mirror 15 and a lower DBR mirror 12. A light-emitting area 18 is defined by a current pinch structure 14. Of a laminate constituting the upper or lower DBR mirror, a specific layer disposed in the vicinity of the active layer 13 has a thickness of ((m/2)+1/4)λ, where m is a natural number of 1 or larger,λis an oscillation wavelength in a medium, and ions are selectively implanted to form the current pinch structure 14. COPYRIGHT: (C)2008,JPO&INPIT
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