发明名称 |
INTEGRATED CIRCUIT STRUCTURE WITH SUBSTRATE ISOLATION AND UN-DOPED CHANNEL |
摘要 |
An integrated circuit (IC) structure is provided. The IC structure comprises: a first substrate having a plurality of conductive features formed on the substrate; and a plurality of chips mechanically bonded and electrically coupled to the first substrate. A first chip among the chips has a first bump attached to a first conductive feature among the conductive features. The first bump has an elongated cross-sectional surface unit which is formed on a surface in parallel to a surface of the first substrate. The first substrate and the first chip are bonded to have a configuration where a longitudinal shaft of the first bump is oriented to indicate a center position of the first substrate and indicate the direction deviated from the center position of the first chip. |
申请公布号 |
KR20160099440(A) |
申请公布日期 |
2016.08.22 |
申请号 |
KR20150056380 |
申请日期 |
2015.04.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHIANG TSUNG HSIEN;CHUANG CHITA;TSENG MING HUNG;CHEN CHEN SHIEN |
分类号 |
H01L25/065;H01L23/488 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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