发明名称 INTEGRATED CIRCUIT STRUCTURE WITH SUBSTRATE ISOLATION AND UN-DOPED CHANNEL
摘要 An integrated circuit (IC) structure is provided. The IC structure comprises: a first substrate having a plurality of conductive features formed on the substrate; and a plurality of chips mechanically bonded and electrically coupled to the first substrate. A first chip among the chips has a first bump attached to a first conductive feature among the conductive features. The first bump has an elongated cross-sectional surface unit which is formed on a surface in parallel to a surface of the first substrate. The first substrate and the first chip are bonded to have a configuration where a longitudinal shaft of the first bump is oriented to indicate a center position of the first substrate and indicate the direction deviated from the center position of the first chip.
申请公布号 KR20160099440(A) 申请公布日期 2016.08.22
申请号 KR20150056380 申请日期 2015.04.22
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHIANG TSUNG HSIEN;CHUANG CHITA;TSENG MING HUNG;CHEN CHEN SHIEN
分类号 H01L25/065;H01L23/488 主分类号 H01L25/065
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