发明名称 |
Activated chemical process for enhancing material properties of dielectric films |
摘要 |
<p>A method for restoring a dielectric constant of a layer of a silicon-containing dielectric material having a first dielectric constant and at least one surface, wherein the first dielectric constant of the layer of silicon-containing dielectric material has increased to a second dielectric constant, the method comprising the steps of: contacting the at least one surface of the layer of silicon-containing dielectric material with a silicon-containing fluid; and exposing the at least one surface of the layer of silicon-containing dielectric material to an energy source selected from the group consisting of: UV radiation, heat, and an electron beam, wherein the layer of silicon-containing dielectric material has a third dielectric constant that is lower than the second dielectric constant after exposing the layer of silicon-containing dielectric material to the energy source.</p> |
申请公布号 |
EP1959485(A2) |
申请公布日期 |
2008.08.20 |
申请号 |
EP20080151518 |
申请日期 |
2008.02.15 |
申请人 |
AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
WEIGEL, SCOTT JEFFREY;O'NEILL, MARK LEONARD;VRTIS, RAYMOND NICHOLAS;SINATORE, DINO |
分类号 |
H01L21/312;H01L21/316 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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