SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to increase surface area of a gate interlayer dielectric layer by forming a first conductive layer on an active region and lateral walls of a molding pattern, wherein the first conductive layer on the active region is thicker than the first conductive layer on the lateral walls of the molding pattern. . A method of manufacturing a semiconductor device includes the steps of: forming an isolation layer(120) defining an active region(125) on a semiconductor substrate(100); forming a molding pattern on the isolation layer; forming a first conductive layer on both upper and lateral surfaces of the molding pattern and the semiconductor substrate; removing the conductive layer on the upper surface of the molding pattern to form a first conductive pattern(136) including a plate extending on the active region and a lateral wall contacting the molding pattern at the edge of the plate and extending vertically to the semiconductor substrate; removing the molding pattern; and forming a gate interlayer dielectric layer(150) on the isolation layer and the first conductive pattern, wherein the isolation layer is as high as the semiconductor substrate. The width of the molding pattern is narrower than the upper width of the isolation layer, and the plate extends on the isolation layer. The plate is thicker than the lateral wall.