NON-VOLATILE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME

摘要

A non-volatile memory device and a manufacturing method thereof are provided to decrease a junction leakage current and an off-current by elongating a channel region along a protrusion portion. A non-volatile memory device includes a semiconductor substrate(105), a pair of control gate electrodes(155a), and a pair of charge storage layers(135a). The semiconductor substrate includes an active region, which is defined by a device isolation film. The active region includes a protrusion portion. The control gate electrodes cover both sides of the protrusion portion and are arranged to be apart from each other. The charge storage layers are applied on the both sides of the protrusion portion and between the control gate electrodes. The control gate electrodes are apart from each other on an upper surface of the protrusion portion.