| 摘要 |
A method for manufacturing a semiconductor device is provided to relieve a stress applied on a tungsten film for bitlines by adjusting a deposition condition for a nitride film for hardmasks and a tungsten film for hardmasks. Tungsten is applied as a bitline material and a stack of a nitride film and a tungsten film is applied as a bitline hardmask material. The nitride film for hardmasks is formed at a power between 500 and 550 W according to a CVD process. During the CVD(Chemical Vapor Deposition) process, flow rates of SiH4 and NH3 gases are adjusted between 30 and 40 sccm and 20 and 24 sccm, respectively. The tungsten film for hardmasks is formed at a DC power between 6000 and 7000 W and applied on a target in a chamber according to a PVD(Physical Vapor Deposition) process.
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