发明名称 |
Structure and method of sub-gate and architectures employing bandgap engineered SONOS devices |
摘要 |
A bandgap engineered SONOS device structure for design with various AND architectures to perform a source side injection programming method. The BE-SONOS device structure comprises a spacer oxide disposed between a control gate overlaying an oxide-nitride-oxide-nitride-oxide stack and a sub-gate overlaying a gate oxide. In a first embodiment, a BE-SONOS sub-gate-AND array architecture is constructed multiple columns of SONONOS devices with sub-gate lines and diffusion bitlines. In a second embodiment, a BE-SONOS sub-gate-inversion-bitline-AND architecture is constructed multiple columns of SONONOS devices with sub-gate inversion bitlines and with no diffusion bitlines.
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申请公布号 |
US7414889(B2) |
申请公布日期 |
2008.08.19 |
申请号 |
US20060419977 |
申请日期 |
2006.05.23 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUE HANG-TING;LIEN HAO MING |
分类号 |
G11C11/34;G11C16/06 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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