SEMICONDUCTOR DEVICE AND METHODS FOR MANUFACTURING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to prevent an operation speed of the semiconductor device from being decreased by improving charge mobility in a channel region. A gate pattern, a source region(19a), a drain region(19b), and a channel region(18a) are formed in a PMOS region defined on a semiconductor substrate. The gate pattern is formed on the semiconductor substrate. The source/drain regions are formed at both sides of the gate pattern and filled with epitaxial growth materials. The channel region is formed between the source/drain regions under the gate pattern. The epitaxial growth material is composed of a first material, which generates a compressed stress in the channel region.