Method for Producing Gan Film, Semiconductor Device, Method for Generating Thin Film of Nitride of Group III Element and Semiconductor Device Having Thin Film of Nitride of Group III Element

摘要

A GaN layer ( 12 ) is formed on a planarized surface of a ZnO substrate ( 11 ) to provide a nitride semiconductor device ( 10 ) having the GaN layer. The GaN layer ( 12 ) is formed by a first film-forming step of allowing epitaxial growth of GaN at a temperature not higher than 300° C., and a second film-forming step of allowing epitaxial growth of GaN at a temperature not lower than 550° C. on a film of GaN formed by the first film-forming step.