发明名称 |
DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM |
摘要 |
Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal. |
申请公布号 |
EP1954857(A2) |
申请公布日期 |
2008.08.13 |
申请号 |
EP20060844804 |
申请日期 |
2006.12.04 |
申请人 |
CRYSTAL IS, INC. |
发明人 |
SCHOWALTER, LEO, J.;SLACK, GLEN, A. |
分类号 |
C30B29/40 |
主分类号 |
C30B29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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