发明名称 |
Method for the heat treatment of substrates |
摘要 |
A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.
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申请公布号 |
US7410355(B2) |
申请公布日期 |
2008.08.12 |
申请号 |
US20060356697 |
申请日期 |
2006.02.17 |
申请人 |
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发明人 |
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分类号 |
H01L21/02;H01L21/00;H01L21/26;H01L21/324;H01L21/42;H01L21/477;H01L21/683 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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