| 发明名称 |
Low voltage superjunction MOSFET |
| 摘要 |
A power semiconductor switching device such as a power MOSFET that includes breakdown voltage enhancement regions formed by self-alignment.
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| 申请公布号 |
US7410851(B2) |
申请公布日期 |
2008.08.12 |
| 申请号 |
US20030746334 |
申请日期 |
2003.12.23 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
HENSON TIMOTHY;CAO JIANJUN |
| 分类号 |
H01L21/336;H01L29/06;H01L29/10;H01L29/423;H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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