发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
In a method of manufacturing a semiconductor device such as a flash memory device, an insulating pattern having an opening is formed to partially expose a surface of a substrate. A first silicon layer is formed on the exposed surface portion of the substrate and the insulating pattern. The first silicon layer has an opened seam overlying the previously exposed portion of the substrate. A heat treatment on the substrate is performed at a temperature sufficient to induce silicon migration so as to cause the opened seam to be closed via the silicon migration. A second silicon layer is then formed on the first silicon layer. Thus, surface profile of a floating gate electrode obtained from the first and second silicon layers may be improved.
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申请公布号 |
US7410869(B2) |
申请公布日期 |
2008.08.12 |
申请号 |
US20060480380 |
申请日期 |
2006.07.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEAM HUN-HYEOUNG;LEE HYEON-DEOK;YOU YOUNG-SUB;JANG WON-JUN;LEE WOONG;PARK JUNG-HYUN;LEE SANG-KYOUNG;JEE JUNG-GEUN;LEE SANG-HOON |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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