发明名称 MICROWAVE PLASMA CVD SYSTEM
摘要 <p>A microwave plasma CVD system in which positional control of plasma can be carried out satisfactorily under such conditions as a large area high quality diamond thin film can be deposited. The microwave plasma CVD system comprises a vacuum chamber (1) having an aperture (2) in the upper center for introducing microwave (20); a substrate supporting base (11) for supporting a substrate in the vacuum chamber; a waveguide for guiding a microwave to the aperture; a dielectric window (22) for introducing a microwave into the vacuum chamber; and an antenna section (25), which is arranged for introducing a microwave into the vacuum chamber, and is composed of a round rod portion (23) located in the center of the waveguide, the aperture and the dielectric window, and an electrode portion (24) combined with the upper portion of the vacuum chamber to clamp the dielectric window for the purpose of holding vacuum. The end face of the electrode portion (24) is formed wider than the dielectric window to conceal the dielectric window, and a recess (26) of a predetermined size is formed on the surface of the electrode portion (24) on the center side of the vacuum chamber.</p>
申请公布号 WO2008093389(A1) 申请公布日期 2008.08.07
申请号 WO2007JP51381 申请日期 2007.01.29
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD.;UEDA, AKIHIKO;MEGURO, KIICHI;YAMAMOTO, YOSHIYUKI;NISHIBAYASHI, YOSHIKI;IMAI, TAKAHIRO 发明人 UEDA, AKIHIKO;MEGURO, KIICHI;YAMAMOTO, YOSHIYUKI;NISHIBAYASHI, YOSHIKI;IMAI, TAKAHIRO
分类号 C23C16/511;C30B29/04;H01L21/205 主分类号 C23C16/511
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