FILM FORMING METHOD USING ATOMIC LAYER DEPOSITION METHOD AND ITS FILM FORMING DEVICE

摘要

PROBLEM TO BE SOLVED: To apply atomic layer deposition (ALD) methods to various film formations to improve throughput, and to miniaturize a device simultaneously. SOLUTION: The film forming method using the atomic layer deposition (ALD) method is characterized in that a liquid raw material composed of an organic metal compound is directly jetted into a film forming chamber 2 holding a substrate W therein by a liquid raw material jetting valve 41. COPYRIGHT: (C)2008,JPO&INPIT