发明名称 |
SEMICONDUCTOR SUBSTRATE WITH MULTIPLE CRYSTALLOGRAPHIC ORIENTATIONS |
摘要 |
A pair of semiconductor structures and a method for fabricating a semiconductor structure each utilize a semiconductor substrate having a first crystallographic orientation, and a dielectric layer located thereupon. The method provides for epitaxially growing a semiconductor layer on the semiconductor substrate to encapsulate the dielectric layer. The method also provides for patterning the semiconductor layer to yield a semiconductor structure that comprises a bulk semiconductor structure and a semiconductor-on-insulator structure, or alternatively a patterned semiconductor layer that straddles the dielectric layer and contacts the semiconductor substrate.
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申请公布号 |
US2008185592(A1) |
申请公布日期 |
2008.08.07 |
申请号 |
US20060306713 |
申请日期 |
2006.01.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KIM BYEONG Y.;CHEN XIAOMENG;LEE WOO-HYEONG;ZHU HUILONG |
分类号 |
H01L29/04;H01L21/20 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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