| 摘要 |
A first main electrode is provided on one surface thereof. On the other surface thereof, a second semiconductor layer of the first conduction type and a third semiconductor layer of the second conduction type are arranged alternately along the surface. A fourth semiconductor layer of the second conduction type and a fifth semiconductor layer of the first conduction type are stacked on the surfaces of the second and third semiconductor layers. The semiconductor device further comprises a control electrode formed in a trench with an insulator interposed therebetween. The trench passes through the fourth and fifth semiconductor layers and reaches the second semiconductor layer. A sixth semiconductor layer of the first conduction type is diffused from the bottom of the trench. A second main electrode is connected to the fourth and fifth semiconductor layers.
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