发明名称 |
Electrically programmable memory element with improved contacts |
摘要 |
A method of making an electrically programmable memory element, comprising: providing a first dielectric layer; forming a conductive material over the first dielectric layer; forming a second dielectric layer over the conductive material; and forming a programmable resistance material in electrical contact with a peripheral surface of the conductive material.
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申请公布号 |
US7407829(B2) |
申请公布日期 |
2008.08.05 |
申请号 |
US20040799265 |
申请日期 |
2004.03.12 |
申请人 |
OVONYX, INC. |
发明人 |
LOWREY TYLER;OVSHINSKY STANFORD R.;WICKER GUY C.;KLERSY PATRICK J.;PASHMAKOV BOIL;CZUBATYJ WOLODYMYR;KOSTYLEV SERGEY A. |
分类号 |
H01L21/00;G11C11/56;H01L27/24;H01L45/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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