| 摘要 |
<p>A method for forming a bonding pad in fabricating a semiconductor device is provided to avoid pad corrosion generated by AlFx byproduct between fluorine and an aluminum pad layer by effectively removing fluorine. A photoresist layer is deposited on an insulation layer(202) on a metal interconnection aluminum pad layer(200). A photolithography process is performed to pattern only the open region of the aluminum pad layer. The insulation layer of the open region of the aluminum pad layer is removed by TV RIE(reactive ion etching) while using the patterned photoresist layer as a mask. An Ar/N2/H2 plasma treatment process is performed by using the aluminum pad layer opened by TV RIE. A TV ashing process can be performed on the open region of the aluminum pad layer.</p> |
