发明名称 |
Device Having Pocketless Regions and Method of Making the Device |
摘要 |
An example of the present application is directed to an integrated circuit having a first plurality of transistors and a second plurality of transistors. Each of the first plurality of transistors comprises a first gate structure oriented in a first direction and each of the second plurality of transistors comprises a second gate structure oriented in a second direction. Each of the first plurality of transistors are formed with at least one more pocket region than each of the second plurality of transistors. Methods for forming the integrated circuit devices of the present application are also disclosed.
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申请公布号 |
US2008179691(A1) |
申请公布日期 |
2008.07.31 |
申请号 |
US20070668946 |
申请日期 |
2007.01.30 |
申请人 |
BENAISSA KAMEL;BALDWIN GREG;EKBOTE SHASHANK |
发明人 |
BENAISSA KAMEL;BALDWIN GREG;EKBOTE SHASHANK |
分类号 |
H01L27/088;H01L21/77 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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