PLASMA PROCESSING APPARATUS

摘要

A plasma etching apparatus in which discharge instability due to insufficient DC grounding is prevented. A grounded circular conductor is provided as a DC grounding means in a vacuum processing chamber and a control means controls a DC bias power supply according to output value of a current monitor so that the current which flows from the circular conductor to the ground is around 0 A, thereby preventing discharge instability which might be caused by increased plasma space potential.