METHOD FOR FORMING CHALCOGENIDE FILM AND METHOD FOR MANUFACTURING RECORDING ELEMENT

摘要

This invention provides a method for forming a chalcogenide film within a contact hole formed in an insulating layer on a substrate. The method comprises the step of providing a target having the same composition as the chalcogenide film, the step of setting an L/T ratio to not less than 0.5 and not more than 1.5, wherein T represents the diameter of the target, m, L represents the distance between the target and the substrate, m, and the step of forming a chalcogenide film within the contact hole by a sputtering process wherein a bias electric power is applied to the substrate to apply a sputtering electric power to the target.