| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method for forming a silicide layer at a stable film thickness while applying a stress to a channel region, and a semiconductor device. SOLUTION: The semiconductor device manufacturing method and the semiconductor device are composed as follows. First, a gate electrode 14 is formed on an Si substrate 11 via a gate insulating film 13. Next, the surface layer of the Si substrate 11 is dug down by etching using the gate electrode 14 as a mask. Then, a first layer 21a comprising an SiGe layer is epitaxially grown on the surface of the dug-down Si substrate 11. Subsequently, a second layer 21b, comprising an SiGe layer or an Si layer having a lower Ge concentration than that of the first layer 21a, is epitaxially grown on the first layer 21a. After that, a third layer 21c, comprising an SiGe layer having a higher Ge concentration than that of the second layer 21b, is epitaxially grown on the second layer 21b. In the sixth step after that, a silicide layer 22 is formed on the third layer 21c and the second layer 21b. COPYRIGHT: (C)2008,JPO&INPIT
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