| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide-bonded silicon carbide-based sintered compact having excellent creep resistance and thermal shock resistance, free from firing crack or firing warpage and manufactured at a firing temperature lower than that in a conventional sintered compact and a method of manufacturing the same. <P>SOLUTION: The oxide-bonded silicon carbide-based sintered compact consists essentially of silicon carbide, comprises aggregate particles substantially comprising silicon carbide and a bonded part containing silicon dioxide bonding the aggregate and has a porous structure. The bonded part has a crystal phase of silicon dioxide as a main phase and contains NaV<SB>6</SB>O<SB>15</SB>and V<SB>2</SB>O<SB>4</SB>in a state of a crystal phase of NaV<SB>6</SB>O<SB>15</SB>and a crystal phase of V<SB>2</SB>O<SB>4</SB>. <P>COPYRIGHT: (C)2008,JPO&INPIT |
