发明名称 SEMICONDUCTOR SENSOR DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To resolve problems, wherein when a MEMS assembly in which a MEMS chip and a silicon-made cap chip are jointed is resin-casted, wires move and contact with a side of the silicon-made cap chip, thereby generating noises and line short circuiting. SOLUTION: The side of the silicon-made cap chip is formed by wet etching, and an insulation protecting film is formed on the wet-etched surface, thereby forming the insulation protecting film having a high adhesion force; whereby even if wires moves and come into contact with a cap chip side at resin-molding, generation of noises and line short circuiting can be prevented. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008177481(A) 申请公布日期 2008.07.31
申请号 JP20070011473 申请日期 2007.01.22
申请人 HITACHI METALS LTD 发明人 AONO TAKANORI;OKADA RYOJI;KAZAMA ATSUSHI;TAKADA YOSHIAKI
分类号 H01L23/02;B81C3/00;H01L21/56;H01L29/84 主分类号 H01L23/02
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