| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an abrasive compound, which can be used for polishing a compound semiconductor wafer, enables high-speed polishing, and achieves superior polishing characteristics in terms of surface roughness, flatness, shape stability, and the like. <P>SOLUTION: An abrasive grain (1) consisting of aggregates, which are formed by agglutinating primary grains with the average diameter of 0.005 μm or more to 5 μm or less, and of which the average grain diameter is 0.5 μm or more to 20 μm or less or an abrasive grain (2), at least part of which consists of aggregates of primary grains whose surfaces are coated with a lubricant is used to manufacture the abrasive compound. It is desirable that such an abrasive grain is made of silicon dioxide. <P>COPYRIGHT: (C)2003,JPO |
