发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 mum or more.
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申请公布号 |
US7405115(B2) |
申请公布日期 |
2008.07.29 |
申请号 |
US20040978512 |
申请日期 |
2004.11.02 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SUZAWA HIDEOMI;KUSUYAMA YOSHIHIRO;ONO KOJI;KOYAMA JUN |
分类号 |
H01L21/00;H01L29/786;G02F1/1362;H01L21/77;H01L21/84;H01L27/12 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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