THIN FILM TRANSISTOR, FABRICATING METHOD OF THE THIN FILM TRANSISTOR, AND ORGANIC LIGHTING EMITTING DIODE DISPLAY DEVICE COMPRISING THE SAME

摘要

A thin film transistor is provided to reduce a leakage current value by removing a metal catalyst in a channel region of a semiconductor layer. A semiconductor layer is formed on a substrate, including a channel region and a source/drain region and crystallized by using a metal catalyst. A gate electrode is positioned to correspond to a predetermined region of the semiconductor layer. A gate insulation layer is interposed between the gate electrode and the semiconductor layer to insulate the semiconductor layer from the gate electrode. A source/drain electrode is electrically connected to the source/drain region of the semiconductor layer. Metal different from the metal catalyst or its metal silicide exists from the surface of the semiconductor layer to a predetermined depth in the semiconductor layer separated from the channel region. The length and width of the channel region of the semiconductor layer and a leakage current value satisfies the following mathematical formula 1. [Mathematical formula 1 ]Ioff/W(L)=3.4E-15L^2+2.4E-12L+1 wherein Ioff is a leakage current value of the semiconductor layer, W is a width of the channel region, L is a length of the channel region, and c is a constant of 2.5E-13 to 6.8E-13. The length of the channel region of the semiconductor layer can be greater than 0 micrometer and not greater than 15 mum.