摘要 |
<p>A sense amplifier circuit for reading the state of memory cells. In one aspect of the invention, the sense amplifier circuit includes a first stage receiving a cell current derived from the memory cell and a reference current derived from a reference cell, and a second stage receiving the cell current and the reference current. A comparator, coupled to the first stage and the second stage, provides an output indicative of the state of the memory cell based on a difference of the voltages provided by the first stage and the second stage, where the state indicated by the comparator is substantially unaffected by capacitive current components provided by transient behavior of the first and second stages.</p> |
申请人 |
ATMEL CORPORATION;PELLI, GABRIELE;BEDARIDA, LORENZO;FRULIO, MASSIMILIANO;MANFRE', DAVIDE |
发明人 |
PELLI, GABRIELE;BEDARIDA, LORENZO;FRULIO, MASSIMILIANO;MANFRE', DAVIDE |