发明名称 |
PLASMA DOPING METHODS USING MULTIPLE SOURCE GASES |
摘要 |
A plasma doping method includes providing a substrate including a layer to be doped inside a chamber, and supplying first and second source gases to the layer to achieve a desired doping concentration. The first source gas includes a component configured to increase a thickness of the layer, and the second gas includes a component configured to reduce a thickness of the layer.
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申请公布号 |
US2008176387(A1) |
申请公布日期 |
2008.07.24 |
申请号 |
US20070753791 |
申请日期 |
2007.05.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG JONG-HOON;PARK TAI-SU;CHOI SI-YOUNG;KIM MIN-JIN |
分类号 |
H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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