| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device exhibiting good cut-off characteristics by suppressing drain induced barrier lowering. SOLUTION: The semiconductor device includes a substrate 101, a source region 102 formed in the surface portion of the substrate 101, a first insulating layer 103 formed on the substrate 101, a gate electrode 104 formed on the first insulating layer 103, a second insulating layer 105 formed on the gate electrode 104, a body portion 106 connected with the source region 102 and formed to include a void 107 while penetrating the first insulating layer 103, the gate electrode 104 and the second insulating layer 105, a gate insulating film 108 formed between the body portion 106 and the gate electrode 104 to surround the body portion 106, and a drain region 110 connected with the body portion 106. COPYRIGHT: (C)2008,JPO&INPIT
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